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Electrical engineering doctoral student Dheeraj Mohata has worked with Suman Datta, professor of electrical engineering, to develop a heterojunction tunneling field effect transistor. (Photo credit: Curtis Chan)
Dedication of EE lab equipment donated by B&K Precision; President/CEO Victor Tolan tours BCOE with Dean Abbaschian
Doctoral student Dheeraj Mohata, left, and Suman Datta, professor of electrical engineering, teamed with researchers at the University of Notre Dame to announce a breakthrough in the development of tunneling field effect transistors, a semiconductor technology that takes advantage of the quirky behavior of electrons at the quantum level. (Photo credit: Curtis Chan)
Doctoral student Dheeraj Mohata, left, and Suman Datta, professor of electrical engineering, teamed with researchers at the University of Notre Dame to announce a breakthrough in the development of tunneling field effect transistors, a semiconductor technology that takes advantage of the quirky behavior of electrons at the quantum level. (Photo credit: Curtis Chan)
Doctoral student Dheeraj Mohata, left, and Suman Datta, professor of electrical engineering, teamed with researchers at the University of Notre Dame to announce a breakthrough in the development of tunneling field effect transistors, a semiconductor technology that takes advantage of the quirky behavior of electrons at the quantum level. (Photo credit: Curtis Chan)
Doctoral student Dheeraj Mohata, left, and Suman Datta, professor of electrical engineering, teamed with researchers at the University of Notre Dame to announce a breakthrough in the development of tunneling field effect transistors, a semiconductor technology that takes advantage of the quirky behavior of electrons at the quantum level. (Photo credit: Curtis Chan)