New SiA468DJ 30 V N-Channel TrenchFET® Gen IV Power MOSFET Offers Industry-Low On-Resistance, Increases Power Density and Efficiency
With best-in-class on-resistance and continuous drain current for 30 V devices in 2 mm by 2 mm plastic packages, Vishay’s SiA468DJ n-channel TrenchFET® Gen IV power MOSFET increases power density and efficiency for mobile devices, consumer electronics, and power supplies.
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Uploaded on March 22, 2017
New SiA468DJ 30 V N-Channel TrenchFET® Gen IV Power MOSFET Offers Industry-Low On-Resistance, Increases Power Density and Efficiency
With best-in-class on-resistance and continuous drain current for 30 V devices in 2 mm by 2 mm plastic packages, Vishay’s SiA468DJ n-channel TrenchFET® Gen IV power MOSFET increases power density and efficiency for mobile devices, consumer electronics, and power supplies.
226
views
0
faves
0
comments
Uploaded on March 22, 2017