New silicon memory technology developed at UCL
These are the first silicon oxide-based ‘Resistive RAM’ memory chips capable of operating in ambient conditions. They were developed by researchers at UCL Electronic & Electrical Engineering and could be the basis of memory using a thousandth of the energy, while being a hundred times faster, than standard Flash memory chips.
Their efficiency comes from the novel silicon oxide they are made from, which gives them 'memristor' properties: their electrical resistance changes when a voltage is applied – and they “remember” this change even when the power is turned off.
These pictures show wafers of the novel material, patterend with structures for testing its properties.
New silicon memory technology developed at UCL
These are the first silicon oxide-based ‘Resistive RAM’ memory chips capable of operating in ambient conditions. They were developed by researchers at UCL Electronic & Electrical Engineering and could be the basis of memory using a thousandth of the energy, while being a hundred times faster, than standard Flash memory chips.
Their efficiency comes from the novel silicon oxide they are made from, which gives them 'memristor' properties: their electrical resistance changes when a voltage is applied – and they “remember” this change even when the power is turned off.
These pictures show wafers of the novel material, patterend with structures for testing its properties.