imec_int
Clement Merckling
Principal Member of Technical Staff, imec
Clement Merckling obtained, in 2004, a Master degree in Microelectronics from the Higher Institute for Electronics and Digital Communication (ISEN) and a second Master degree in Material Sciences from the University of Lille. He obtained in 2007 a PhD in Material Sciences from the Ecole Centrale de Lyon. His PhD thesis between INL/CNRS laboratory and ST Microelectronics company was focused on the Molecular Beam Epitaxy (MBE) of oxides on Si substrates for high-k gate dielectrics in advanced CMOS devices. Afterward, as postdoctoral research associate from the University of Leuven (KU Leuven), he joined the IMEC Ge/III-V exploratory program working on MBE gate dielectric. During the period 2008 - 2013, he worked as scientist and then as senior scientist, driving the Molecular Beam Epitaxy (MBE) activities including III-V semiconductors heteroepitaxy, high-k oxide growth and passivation studies for high-m channels (III-V & GeSn). In 2013, as a principal member of technical staff, he took the technical lead of III-V epitaxy activities for the IMEC Logic and Photonic programs, focusing on the selective area growth of III-V compounds on Silicon by Vapor Phase Epitaxy (MOVPE). Through the fundamental understanding of the heteroepitaxial processes, world-first III-V FinFET devices and III-V Laser devices monolithically integrated on Silicon were demonstrated at IMEC. Since 2018, he is focusing on exploratory materials grown by MBE and Pulsed Laser Deposition (PLD) for beyond CMOS devices.
www.imec-int.com/en/articles/prestigious-european-erc-con...
Clement Merckling
Principal Member of Technical Staff, imec
Clement Merckling obtained, in 2004, a Master degree in Microelectronics from the Higher Institute for Electronics and Digital Communication (ISEN) and a second Master degree in Material Sciences from the University of Lille. He obtained in 2007 a PhD in Material Sciences from the Ecole Centrale de Lyon. His PhD thesis between INL/CNRS laboratory and ST Microelectronics company was focused on the Molecular Beam Epitaxy (MBE) of oxides on Si substrates for high-k gate dielectrics in advanced CMOS devices. Afterward, as postdoctoral research associate from the University of Leuven (KU Leuven), he joined the IMEC Ge/III-V exploratory program working on MBE gate dielectric. During the period 2008 - 2013, he worked as scientist and then as senior scientist, driving the Molecular Beam Epitaxy (MBE) activities including III-V semiconductors heteroepitaxy, high-k oxide growth and passivation studies for high-m channels (III-V & GeSn). In 2013, as a principal member of technical staff, he took the technical lead of III-V epitaxy activities for the IMEC Logic and Photonic programs, focusing on the selective area growth of III-V compounds on Silicon by Vapor Phase Epitaxy (MOVPE). Through the fundamental understanding of the heteroepitaxial processes, world-first III-V FinFET devices and III-V Laser devices monolithically integrated on Silicon were demonstrated at IMEC. Since 2018, he is focusing on exploratory materials grown by MBE and Pulsed Laser Deposition (PLD) for beyond CMOS devices.
www.imec-int.com/en/articles/prestigious-european-erc-con...