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P28F010-200 EEPROM by Intel

Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; onboard during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases memory flexibility, while contributing to time and cost savings.

 

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Uploaded on November 20, 2012
Taken on November 20, 2012