Materials Science - a Chalmers Area of Advance
17 - InAs nanowires grown on Silicon by molecular beam epitaxy
Advances in silicon technology continue to revolutionize micro-/nano-electronics. The functionality and complexity of complementary metal oxide semiconductor (CMOS) circuitry has increased and the cost decreased to the point where Si microelectronics has become ubiquitous and touches every aspect of our lives. However, as the devices reach deep sub-100 nm scale, conventional scaling methods face increasing technological and fundamental challenges, e.g. increasing demand on lithography resolution. Semiconductor nanowires represent a unique system for exploring phenomena at the nanoscale and are also expected to play a critical role in future electronic and optoelectronic devices to sustain the historical scaling trend beyond CMOS.
17 - InAs nanowires grown on Silicon by molecular beam epitaxy
Advances in silicon technology continue to revolutionize micro-/nano-electronics. The functionality and complexity of complementary metal oxide semiconductor (CMOS) circuitry has increased and the cost decreased to the point where Si microelectronics has become ubiquitous and touches every aspect of our lives. However, as the devices reach deep sub-100 nm scale, conventional scaling methods face increasing technological and fundamental challenges, e.g. increasing demand on lithography resolution. Semiconductor nanowires represent a unique system for exploring phenomena at the nanoscale and are also expected to play a critical role in future electronic and optoelectronic devices to sustain the historical scaling trend beyond CMOS.