imagesofresearch
Dislocations- Discotheque by Naresh Kumar Gunasekar (Physics)
The availability of a simple, non-destructive technique to rapidly detect and identify defects in semiconductors would represent a real step forward for the development of new devices such as UV LEDs, high power green laser diodes, high power transistors and potentially, semiconductor-based ferromagnets. Such devices have applications as diverse as air and water purification, lighting, data processing, data storage and energy conservation and distribution. Recently we have developed a method which allows the unambiguous identification of the most common defects in semiconductors (e.g., GaN, ZnO and SiC), namely threading dislocations. This new method reduces the time required to obtain quantitative and statistically significant information on dislocations compared to presently available techniques. The presented image is a scanning electron microscope - electron channeling contrast image acquired from a GaN thin film showing individual dislocations and atomic steps. An artistic impression of the channeling electrons has been generated by combining displacement mapping, three dimensional rendering and two dimensional compositing techniques.
Image: © 2013 Naresh Kumar Gunasekar. Paul Edwards, Benjamin Hourahine and Carol Trager-Cowan
Dislocations- Discotheque by Naresh Kumar Gunasekar (Physics)
The availability of a simple, non-destructive technique to rapidly detect and identify defects in semiconductors would represent a real step forward for the development of new devices such as UV LEDs, high power green laser diodes, high power transistors and potentially, semiconductor-based ferromagnets. Such devices have applications as diverse as air and water purification, lighting, data processing, data storage and energy conservation and distribution. Recently we have developed a method which allows the unambiguous identification of the most common defects in semiconductors (e.g., GaN, ZnO and SiC), namely threading dislocations. This new method reduces the time required to obtain quantitative and statistically significant information on dislocations compared to presently available techniques. The presented image is a scanning electron microscope - electron channeling contrast image acquired from a GaN thin film showing individual dislocations and atomic steps. An artistic impression of the channeling electrons has been generated by combining displacement mapping, three dimensional rendering and two dimensional compositing techniques.
Image: © 2013 Naresh Kumar Gunasekar. Paul Edwards, Benjamin Hourahine and Carol Trager-Cowan