Institut Polytechnique de Paris
ISAB Institut Polytechnique de Paris First ISAB - International Scientific Advisory Board
Scanning tunneling luminescence microscopy:
Wiebke Hahn
The scanning tunneling luminescence (STL) microscopy allows to study light-matter interaction in semiconductor nanostructures with atomic resolution. In this technique, electrons tunnel from a metallic tip into the sample at a precise location and recombine by emitting light, which is collected and dispersed by a spectrometer. At PMC, the STL technique is currently used to study electron localization in GaInN/GaN alloy semiconductor heterostructures, which are of major relevance for the lighting industry.
" Effets de localisation induite par le désordre dans les composés et dispositifs en nitrures semiconducteurs " et je propose un titre comme : " Mesure propriété intrinsèque de l’alliage InGaN " pour les photos de l'expérience.
Wiebke HAHN
Crédit photographique : © École polytechnique - J.Barande
Institut Polytechnique de Paris
ISAB Institut Polytechnique de Paris First ISAB - International Scientific Advisory Board
Scanning tunneling luminescence microscopy:
Wiebke Hahn
The scanning tunneling luminescence (STL) microscopy allows to study light-matter interaction in semiconductor nanostructures with atomic resolution. In this technique, electrons tunnel from a metallic tip into the sample at a precise location and recombine by emitting light, which is collected and dispersed by a spectrometer. At PMC, the STL technique is currently used to study electron localization in GaInN/GaN alloy semiconductor heterostructures, which are of major relevance for the lighting industry.
" Effets de localisation induite par le désordre dans les composés et dispositifs en nitrures semiconducteurs " et je propose un titre comme : " Mesure propriété intrinsèque de l’alliage InGaN " pour les photos de l'expérience.
Wiebke HAHN
Crédit photographique : © École polytechnique - J.Barande